FQP6N90C
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP6N90C
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 167 W 900 V Continuous Drain Current (ID):6 A 40 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 900 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Termination | Through Hole |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2.3 Ω |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 6 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 167 W |
| Power Dissipation | 167 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 1.77 nF |
| Continuous Drain Current (ID) | 6 A |
| Rds On Max | 2.3 Ω |
| Drain to Source Voltage (Vdss) | 900 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 35 ns |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Rise Time | 90 ns |
| Dual Supply Voltage | 900 V |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 2.3 Ω |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 900 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 374
Distributors
pcbx
pcbxUnit Price$2.27155
Ext.Price$2.27155
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.27155 | $2.27155 |
| 10 | $1.94621 | $19.46210 |
| 25 | $1.69361 | $42.34025 |
| 50 | $1.47379 | $73.68950 |
| 100 | $1.27895 | $127.89500 |
| 300 | $1.23075 | $369.22500 |
| 500 | $1.18437 | $592.18500 |
| 1000 | $1.14392 | $1143.92000 |